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SQP120N10-09_GE3

SQP120N10-09_GE3

For Reference Only

Part Number SQP120N10-09_GE3
PNEDA Part # SQP120N10-09_GE3
Description MOSFET N-CH 100V 120A TO220AB
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 15,252
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 21 - Mar 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQP120N10-09_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQP120N10-09_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQP120N10-09_GE3, SQP120N10-09_GE3 Datasheet (Total Pages: 9, Size: 147.14 KB)
PDFSQP120N10-09_GE3 Datasheet Cover
SQP120N10-09_GE3 Datasheet Page 2 SQP120N10-09_GE3 Datasheet Page 3 SQP120N10-09_GE3 Datasheet Page 4 SQP120N10-09_GE3 Datasheet Page 5 SQP120N10-09_GE3 Datasheet Page 6 SQP120N10-09_GE3 Datasheet Page 7 SQP120N10-09_GE3 Datasheet Page 8 SQP120N10-09_GE3 Datasheet Page 9

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SQP120N10-09_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs9.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs180nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8645pF @ 25V
FET Feature-
Power Dissipation (Max)375W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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