Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

TN2124K1-G

TN2124K1-G TN2124K1-G

For Reference Only

Part Number TN2124K1-G
PNEDA Part # TN2124K1-G
Description MOSFET N-CH 240V 0.134A SOT23-3
Manufacturer Microchip Technology
Unit Price Request a Quote
In Stock 29,730
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 5 - Apr 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TN2124K1-G Resources

Brand Microchip Technology
ECAD Module ECAD
Mfr. Part NumberTN2124K1-G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • TN2124K1-G Datasheet
  • where to find TN2124K1-G
  • Microchip Technology

  • Microchip Technology TN2124K1-G
  • TN2124K1-G PDF Datasheet
  • TN2124K1-G Stock

  • TN2124K1-G Pinout
  • Datasheet TN2124K1-G
  • TN2124K1-G Supplier

  • Microchip Technology Distributor
  • TN2124K1-G Price
  • TN2124K1-G Distributor

TN2124K1-G Specifications

ManufacturerMicrochip Technology
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)240V
Current - Continuous Drain (Id) @ 25°C134mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)3V, 4.5V
Rds On (Max) @ Id, Vgs15Ohm @ 120mA, 4.5V
Vgs(th) (Max) @ Id2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds50pF @ 25V
FET Feature-
Power Dissipation (Max)360mW (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-236AB (SOT23)
Package / CaseTO-236-3, SC-59, SOT-23-3

The Products You May Be Interested In

FDPF7N50F

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UniFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.15Ohm @ 3A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

960pF @ 25V

FET Feature

-

Power Dissipation (Max)

38.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

STF8N90K5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ K5

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

130W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FP

Package / Case

TO-220-3 Full Pack

NTD25P03LT4

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

25A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 5V

Rds On (Max) @ Id, Vgs

80mOhm @ 25A, 5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

1260pF @ 25V

FET Feature

-

Power Dissipation (Max)

75W (Tj)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

STH180N10F3-6

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™ III

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

180A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.5mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

114.6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6665pF @ 25V

FET Feature

-

Power Dissipation (Max)

315W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

H2PAK-6

Package / Case

TO-263-7, D²Pak (6 Leads + Tab)

HUFA75307D3S

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

15A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

90mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 20V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

250pF @ 25V

FET Feature

-

Power Dissipation (Max)

45W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252AA

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

LTM4613IV#PBF

LTM4613IV#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 12V 8A

MPZ2012S300AT000

MPZ2012S300AT000

TDK

FERRITE BEAD 30 OHM 0805 1LN

74HC164D

74HC164D

Toshiba Semiconductor and Storage

IC SHIFT REGISTER 8BIT 14SOP

W25Q16JVZPIQ TR

W25Q16JVZPIQ TR

Winbond Electronics

IC FLASH 16M SPI 133MHZ 8WSON

HCPL-0601

HCPL-0601

Broadcom

OPTOISO 3.75KV OPN COLLECTOR 8SO

BAT54WS-7-F

BAT54WS-7-F

Diodes Incorporated

DIODE SCHOTTKY 30V 100MA SOD323

R5F2L3AACNFP#V0

R5F2L3AACNFP#V0

Renesas Electronics America

IC MCU 16BIT 96KB FLASH 100QFP

LM2596DSADJR4G

LM2596DSADJR4G

ON Semiconductor

IC REG MULT CONFG ADJ 3A D2PAK-5

CP2105-F01-GM

CP2105-F01-GM

Silicon Labs

IC SGL USB-DL UART BRIDGE 24QFN

TAJD336K035RNJ

TAJD336K035RNJ

CAP TANT 33UF 10% 35V 2917

SS36FA

SS36FA

ON Semiconductor

DIODE SCHOTTKY 60V 3A SOD123FA

NRVBS3100T3G

NRVBS3100T3G

ON Semiconductor

DIODE SCHOTTKY 100V 3A SMC