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SQJ960EP-T1_GE3

SQJ960EP-T1_GE3

For Reference Only

Part Number SQJ960EP-T1_GE3
PNEDA Part # SQJ960EP-T1_GE3
Description MOSFET 2N-CH 60V 8A
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,304
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQJ960EP-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQJ960EP-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SQJ960EP-T1_GE3, SQJ960EP-T1_GE3 Datasheet (Total Pages: 11, Size: 228.43 KB)
PDFSQJ960EP-T1_GE3 Datasheet Cover
SQJ960EP-T1_GE3 Datasheet Page 2 SQJ960EP-T1_GE3 Datasheet Page 3 SQJ960EP-T1_GE3 Datasheet Page 4 SQJ960EP-T1_GE3 Datasheet Page 5 SQJ960EP-T1_GE3 Datasheet Page 6 SQJ960EP-T1_GE3 Datasheet Page 7 SQJ960EP-T1_GE3 Datasheet Page 8 SQJ960EP-T1_GE3 Datasheet Page 9 SQJ960EP-T1_GE3 Datasheet Page 10 SQJ960EP-T1_GE3 Datasheet Page 11

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SQJ960EP-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C8A
Rds On (Max) @ Id, Vgs36mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds735pF @ 25V
Power - Max34W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

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