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SH8M4TB1

SH8M4TB1

For Reference Only

Part Number SH8M4TB1
PNEDA Part # SH8M4TB1
Description MOSFET N/P-CH 30V 9A/7A 8SOIC
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 2,100
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SH8M4TB1 Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberSH8M4TB1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SH8M4TB1, SH8M4TB1 Datasheet (Total Pages: 6, Size: 181.7 KB)
PDFSH8M4TB1 Datasheet Cover
SH8M4TB1 Datasheet Page 2 SH8M4TB1 Datasheet Page 3 SH8M4TB1 Datasheet Page 4 SH8M4TB1 Datasheet Page 5 SH8M4TB1 Datasheet Page 6

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SH8M4TB1 Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C9A, 7A
Rds On (Max) @ Id, Vgs18mOhm @ 9A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs15nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds1190pF @ 10V
Power - Max2W
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Input Capacitance (Ciss) (Max) @ Vds

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Power - Max

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Supplier Device Package

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Power - Max

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Operating Temperature

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Supplier Device Package

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Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

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FET Type

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FET Feature

Logic Level Gate, 4V Drive

Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

520pF @ 10V

Power - Max

3W (Ta)

Operating Temperature

150°C

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

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DMN2025UFDB-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

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FET Type

2 N-Channel (Dual)

FET Feature

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12.3nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

486pF @ 10V

Power - Max

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Operating Temperature

-55°C ~ 150°C (TJ)

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6-UDFN Exposed Pad

Supplier Device Package

U-DFN2020-6 (Type B)

SIL2301-TP

Micro Commercial Co

Manufacturer

Micro Commercial Co

Series

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FET Type

2 P-Channel (Dual)

FET Feature

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Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.3A

Rds On (Max) @ Id, Vgs

90mOhm @ 2.5A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

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Power - Max

350mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

SOT-23-6

Supplier Device Package

SOT-23-6L

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