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SQJ952EP-T1_GE3

SQJ952EP-T1_GE3

For Reference Only

Part Number SQJ952EP-T1_GE3
PNEDA Part # SQJ952EP-T1_GE3
Description MOSFET 2 N-CH 60V POWERPAK SO8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 254,556
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQJ952EP-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQJ952EP-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SQJ952EP-T1_GE3, SQJ952EP-T1_GE3 Datasheet (Total Pages: 10, Size: 220.88 KB)
PDFSQJ952EP-T1_GE3 Datasheet Cover
SQJ952EP-T1_GE3 Datasheet Page 2 SQJ952EP-T1_GE3 Datasheet Page 3 SQJ952EP-T1_GE3 Datasheet Page 4 SQJ952EP-T1_GE3 Datasheet Page 5 SQJ952EP-T1_GE3 Datasheet Page 6 SQJ952EP-T1_GE3 Datasheet Page 7 SQJ952EP-T1_GE3 Datasheet Page 8 SQJ952EP-T1_GE3 Datasheet Page 9 SQJ952EP-T1_GE3 Datasheet Page 10

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SQJ952EP-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C23A (Tc)
Rds On (Max) @ Id, Vgs20mOhm @ 10.3A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1800pF @ 30V
Power - Max25W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

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