Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SIA950DJ-T1-GE3

SIA950DJ-T1-GE3

For Reference Only

Part Number SIA950DJ-T1-GE3
PNEDA Part # SIA950DJ-T1-GE3
Description MOSFET 2N-CH 190V 0.95A SC-70-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,400
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Sep 23 - Sep 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIA950DJ-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIA950DJ-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SIA950DJ-T1-GE3, SIA950DJ-T1-GE3 Datasheet (Total Pages: 7, Size: 98.79 KB)
PDFSIA950DJ-T1-GE3 Datasheet Cover
SIA950DJ-T1-GE3 Datasheet Page 2 SIA950DJ-T1-GE3 Datasheet Page 3 SIA950DJ-T1-GE3 Datasheet Page 4 SIA950DJ-T1-GE3 Datasheet Page 5 SIA950DJ-T1-GE3 Datasheet Page 6 SIA950DJ-T1-GE3 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SIA950DJ-T1-GE3 Datasheet
  • where to find SIA950DJ-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SIA950DJ-T1-GE3
  • SIA950DJ-T1-GE3 PDF Datasheet
  • SIA950DJ-T1-GE3 Stock

  • SIA950DJ-T1-GE3 Pinout
  • Datasheet SIA950DJ-T1-GE3
  • SIA950DJ-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SIA950DJ-T1-GE3 Price
  • SIA950DJ-T1-GE3 Distributor

SIA950DJ-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesLITTLE FOOT®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)190V
Current - Continuous Drain (Id) @ 25°C950mA
Rds On (Max) @ Id, Vgs3.8Ohm @ 360mA, 4.5V
Vgs(th) (Max) @ Id1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds90pF @ 100V
Power - Max7W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SC-70-6 Dual
Supplier Device PackagePowerPAK® SC-70-6 Dual

The Products You May Be Interested In

ALD1102BPAL

Advanced Linear Devices Inc.

Manufacturer

Advanced Linear Devices Inc.

Series

-

FET Type

2 P-Channel (Dual) Matched Pair

FET Feature

Standard

Drain to Source Voltage (Vdss)

10.6V

Current - Continuous Drain (Id) @ 25°C

-

Rds On (Max) @ Id, Vgs

270Ohm @ 5V

Vgs(th) (Max) @ Id

1.2V @ 10µA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

10pF @ 5V

Power - Max

500mW

Operating Temperature

0°C ~ 70°C (TJ)

Mounting Type

Through Hole

Package / Case

8-DIP (0.300", 7.62mm)

Supplier Device Package

8-PDIP

ZXMC4559DN8TA

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

3.6A, 2.6A

Rds On (Max) @ Id, Vgs

55mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

20.4nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1063pF @ 30V

Power - Max

1.25W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

BSO4804

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

8A

Rds On (Max) @ Id, Vgs

20mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

2V @ 30µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

870pF @ 25V

Power - Max

2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

SI7905DN-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

6A

Rds On (Max) @ Id, Vgs

60mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

880pF @ 20V

Power - Max

20.8W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® 1212-8 Dual

Supplier Device Package

PowerPAK® 1212-8 Dual

SISF20DN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

14A (Ta), 52A (Tc)

Rds On (Max) @ Id, Vgs

13mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

33nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1290pF @ 30V

Power - Max

5.2W (Ta), 69.4W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® 1212-8SCD

Supplier Device Package

PowerPAK® 1212-8SCD

Recently Sold

1SS355VMTE-17

1SS355VMTE-17

Rohm Semiconductor

DIODE GEN PURP 80V 100MA UMD2

LTC3676HUJ-1#TRPBF

LTC3676HUJ-1#TRPBF

Linear Technology/Analog Devices

IC REG CONV I.MX6 7OUT 40QFN

ISL6422BERZ-T

ISL6422BERZ-T

Renesas Electronics America Inc.

IC REG CONV SATELLIT 2OUT 40QFN

LTM4615IV#PBF

LTM4615IV#PBF

Linear Technology/Analog Devices

DC DC CNVRTR 2X0.8-5V 0.4-2.6V

MPSA70RLRMG

MPSA70RLRMG

ON Semiconductor

TRANS PNP 40V 0.1A TO-92

SR1LARU

SR1LARU

STMicroelectronics

IC SMART RESET 4PIN 6.0S 6UDFN

MCP6566UT-E/OT

MCP6566UT-E/OT

Microchip Technology

IC COMPARATOR O-D 1.8V SOT23-5

CS42426-CQZ

CS42426-CQZ

Cirrus Logic Inc.

IC CODEC 6CH PLL 192KHZ 64LQFP

B560C-13-F

B560C-13-F

Diodes Incorporated

DIODE SCHOTTKY 60V 5A SMC

MIC4420YN

MIC4420YN

Microchip Technology

IC DRIVER MOSFET 6A LO SIDE 8DIP

LD1086D2T33TR

LD1086D2T33TR

STMicroelectronics

IC REG LINEAR 3.3V 1.5A D2PAK

AT24C1024BW-SH-T

AT24C1024BW-SH-T

Microchip Technology

IC EEPROM 1M I2C 1MHZ 8SOIC