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SIA950DJ-T1-GE3

SIA950DJ-T1-GE3

For Reference Only

Part Number SIA950DJ-T1-GE3
PNEDA Part # SIA950DJ-T1-GE3
Description MOSFET 2N-CH 190V 0.95A SC-70-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,400
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIA950DJ-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIA950DJ-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SIA950DJ-T1-GE3, SIA950DJ-T1-GE3 Datasheet (Total Pages: 7, Size: 98.79 KB)
PDFSIA950DJ-T1-GE3 Datasheet Cover
SIA950DJ-T1-GE3 Datasheet Page 2 SIA950DJ-T1-GE3 Datasheet Page 3 SIA950DJ-T1-GE3 Datasheet Page 4 SIA950DJ-T1-GE3 Datasheet Page 5 SIA950DJ-T1-GE3 Datasheet Page 6 SIA950DJ-T1-GE3 Datasheet Page 7

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SIA950DJ-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesLITTLE FOOT®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)190V
Current - Continuous Drain (Id) @ 25°C950mA
Rds On (Max) @ Id, Vgs3.8Ohm @ 360mA, 4.5V
Vgs(th) (Max) @ Id1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds90pF @ 100V
Power - Max7W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SC-70-6 Dual
Supplier Device PackagePowerPAK® SC-70-6 Dual

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