Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SQJ456EP-T1_GE3

SQJ456EP-T1_GE3

For Reference Only

Part Number SQJ456EP-T1_GE3
PNEDA Part # SQJ456EP-T1_GE3
Description MOSFET N-CH 100V 32A PPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 27,144
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQJ456EP-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQJ456EP-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQJ456EP-T1_GE3, SQJ456EP-T1_GE3 Datasheet (Total Pages: 10, Size: 171.47 KB)
PDFSQJ456EP-T1_GE3 Datasheet Cover
SQJ456EP-T1_GE3 Datasheet Page 2 SQJ456EP-T1_GE3 Datasheet Page 3 SQJ456EP-T1_GE3 Datasheet Page 4 SQJ456EP-T1_GE3 Datasheet Page 5 SQJ456EP-T1_GE3 Datasheet Page 6 SQJ456EP-T1_GE3 Datasheet Page 7 SQJ456EP-T1_GE3 Datasheet Page 8 SQJ456EP-T1_GE3 Datasheet Page 9 SQJ456EP-T1_GE3 Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SQJ456EP-T1_GE3 Datasheet
  • where to find SQJ456EP-T1_GE3
  • Vishay Siliconix

  • Vishay Siliconix SQJ456EP-T1_GE3
  • SQJ456EP-T1_GE3 PDF Datasheet
  • SQJ456EP-T1_GE3 Stock

  • SQJ456EP-T1_GE3 Pinout
  • Datasheet SQJ456EP-T1_GE3
  • SQJ456EP-T1_GE3 Supplier

  • Vishay Siliconix Distributor
  • SQJ456EP-T1_GE3 Price
  • SQJ456EP-T1_GE3 Distributor

SQJ456EP-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs26mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs63nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3342pF @ 25V
FET Feature-
Power Dissipation (Max)83W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

The Products You May Be Interested In

IPS10N03LA G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

10.4mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1358pF @ 15V

FET Feature

-

Power Dissipation (Max)

52W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO251-3

Package / Case

TO-251-3 Stub Leads, IPak

IRF9610S

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

1.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3Ohm @ 900mA, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

170pF @ 25V

FET Feature

-

Power Dissipation (Max)

3W (Ta), 20W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRF9520L

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

6.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

600mOhm @ 4.1A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

390pF @ 25V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

STB16N90K5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ K5

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

15A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

330mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

29.7nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1027pF @ 100V

FET Feature

-

Power Dissipation (Max)

190W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

NVD6820NLT4G-VF01

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

90V

Current - Continuous Drain (Id) @ 25°C

10A (Ta), 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

16.7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

83nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4209pF @ 25V

FET Feature

-

Power Dissipation (Max)

4W (Ta), 100W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

TAJA105K016RNJ

TAJA105K016RNJ

CAP TANT 1UF 10% 16V 1206

A42MX09-PQ100

A42MX09-PQ100

Microsemi

IC FPGA 83 I/O 100QFP

ZXM61P02FTA

ZXM61P02FTA

Diodes Incorporated

MOSFET P-CH 20V 0.9A SOT23-3

G8QE-1A DC12

G8QE-1A DC12

Omron Electronics Inc-EMC Div

RELAY AUTOMOTIVE SPST 10A 12V

IR2214SSTRPBF

IR2214SSTRPBF

Infineon Technologies

IC DVR HALF BRIDGE IC 24SSOP

SI4836DY-T1-E3

SI4836DY-T1-E3

Vishay Siliconix

MOSFET N-CH 12V 17A 8-SOIC

IXFX180N10

IXFX180N10

IXYS

MOSFET N-CH 100V 180A PLUS247

ADP122AUJZ-3.3-R7

ADP122AUJZ-3.3-R7

Analog Devices

IC REG LINEAR 3.3V 300MA TSOT5

A42MX16-FPLG84

A42MX16-FPLG84

Microsemi

IC FPGA 72 I/O 84PLCC

ST1S40IPUR

ST1S40IPUR

STMicroelectronics

IC REG BUCK ADJ 3A 8VFQFPN

TPSC107K010R0200

TPSC107K010R0200

CAP TANT 100UF 10% 10V 2312

RCLAMP0502N.TCT

RCLAMP0502N.TCT

Semtech

TVS DIODE 6.5V 30V SLP1210N6