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IRF9610S

IRF9610S

For Reference Only

Part Number IRF9610S
PNEDA Part # IRF9610S
Description MOSFET P-CH 200V 1.8A D2PAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,514
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF9610S Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRF9610S
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF9610S, IRF9610S Datasheet (Total Pages: 10, Size: 201.23 KB)
PDFIRF9610STRR Datasheet Cover
IRF9610STRR Datasheet Page 2 IRF9610STRR Datasheet Page 3 IRF9610STRR Datasheet Page 4 IRF9610STRR Datasheet Page 5 IRF9610STRR Datasheet Page 6 IRF9610STRR Datasheet Page 7 IRF9610STRR Datasheet Page 8 IRF9610STRR Datasheet Page 9 IRF9610STRR Datasheet Page 10

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IRF9610S Specifications

ManufacturerVishay Siliconix
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds170pF @ 25V
FET Feature-
Power Dissipation (Max)3W (Ta), 20W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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