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SQD25N06-22L_T4GE3

SQD25N06-22L_T4GE3

For Reference Only

Part Number SQD25N06-22L_T4GE3
PNEDA Part # SQD25N06-22L_T4GE3
Description MOSFET N-CH 60V 25A TO252AA
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,346
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQD25N06-22L_T4GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQD25N06-22L_T4GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQD25N06-22L_T4GE3, SQD25N06-22L_T4GE3 Datasheet (Total Pages: 10, Size: 194.14 KB)
PDFSQD25N06-22L_GE3 Datasheet Cover
SQD25N06-22L_GE3 Datasheet Page 2 SQD25N06-22L_GE3 Datasheet Page 3 SQD25N06-22L_GE3 Datasheet Page 4 SQD25N06-22L_GE3 Datasheet Page 5 SQD25N06-22L_GE3 Datasheet Page 6 SQD25N06-22L_GE3 Datasheet Page 7 SQD25N06-22L_GE3 Datasheet Page 8 SQD25N06-22L_GE3 Datasheet Page 9 SQD25N06-22L_GE3 Datasheet Page 10

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SQD25N06-22L_T4GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs22mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1975pF @ 25V
FET Feature-
Power Dissipation (Max)62W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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