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SQD100N04-3M6_GE3

SQD100N04-3M6_GE3

For Reference Only

Part Number SQD100N04-3M6_GE3
PNEDA Part # SQD100N04-3M6_GE3
Description MOSFET N-CH 40V 100A TO252AA
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,488
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQD100N04-3M6_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQD100N04-3M6_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQD100N04-3M6_GE3, SQD100N04-3M6_GE3 Datasheet (Total Pages: 9, Size: 154.78 KB)
PDFSQD100N04-3M6_GE3 Datasheet Cover
SQD100N04-3M6_GE3 Datasheet Page 2 SQD100N04-3M6_GE3 Datasheet Page 3 SQD100N04-3M6_GE3 Datasheet Page 4 SQD100N04-3M6_GE3 Datasheet Page 5 SQD100N04-3M6_GE3 Datasheet Page 6 SQD100N04-3M6_GE3 Datasheet Page 7 SQD100N04-3M6_GE3 Datasheet Page 8 SQD100N04-3M6_GE3 Datasheet Page 9

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SQD100N04-3M6_GE3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs105nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6700pF @ 25V
FET Feature-
Power Dissipation (Max)136W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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