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IXFQ30N60X

IXFQ30N60X

For Reference Only

Part Number IXFQ30N60X
PNEDA Part # IXFQ30N60X
Description MOSFET N-CH 600V 30A TO3P
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,532
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFQ30N60X Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFQ30N60X
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFQ30N60X, IXFQ30N60X Datasheet (Total Pages: 6, Size: 185.31 KB)
PDFIXFH30N60X Datasheet Cover
IXFH30N60X Datasheet Page 2 IXFH30N60X Datasheet Page 3 IXFH30N60X Datasheet Page 4 IXFH30N60X Datasheet Page 5 IXFH30N60X Datasheet Page 6

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IXFQ30N60X Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs155mOhm @ 15A, 10V
Vgs(th) (Max) @ Id4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs56nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2270pF @ 25V
FET Feature-
Power Dissipation (Max)500W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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