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SQ7415AENW-T1_GE3

SQ7415AENW-T1_GE3

For Reference Only

Part Number SQ7415AENW-T1_GE3
PNEDA Part # SQ7415AENW-T1_GE3
Description MOSFET P-CH 60V 16A POWERPAK1212
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 43,584
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 23 - Mar 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQ7415AENW-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQ7415AENW-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQ7415AENW-T1_GE3, SQ7415AENW-T1_GE3 Datasheet (Total Pages: 9, Size: 235.78 KB)
PDFSQ7415AENW-T1_GE3 Datasheet Cover
SQ7415AENW-T1_GE3 Datasheet Page 2 SQ7415AENW-T1_GE3 Datasheet Page 3 SQ7415AENW-T1_GE3 Datasheet Page 4 SQ7415AENW-T1_GE3 Datasheet Page 5 SQ7415AENW-T1_GE3 Datasheet Page 6 SQ7415AENW-T1_GE3 Datasheet Page 7 SQ7415AENW-T1_GE3 Datasheet Page 8 SQ7415AENW-T1_GE3 Datasheet Page 9

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SQ7415AENW-T1_GE3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs65mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1385pF @ 25V
FET Feature-
Power Dissipation (Max)53W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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