SQ7415AENW-T1_GE3 Datasheet
SQ7415AENW-T1_GE3 Datasheet
Total Pages: 9
Size: 235.78 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SQ7415AENW-T1_GE3
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Manufacturer Vishay Siliconix Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 65mOhm @ 5.7A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1385pF @ 25V FET Feature - Power Dissipation (Max) 53W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8 Package / Case PowerPAK® 1212-8 |
