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SQ4532AEY-T1_GE3

SQ4532AEY-T1_GE3

For Reference Only

Part Number SQ4532AEY-T1_GE3
PNEDA Part # SQ4532AEY-T1_GE3
Description MOSFET N/P-CH 30V 7.3/5.3A 8SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,628
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQ4532AEY-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQ4532AEY-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SQ4532AEY-T1_GE3, SQ4532AEY-T1_GE3 Datasheet (Total Pages: 14, Size: 263.47 KB)
PDFSQ4532AEY-T1_GE3 Datasheet Cover
SQ4532AEY-T1_GE3 Datasheet Page 2 SQ4532AEY-T1_GE3 Datasheet Page 3 SQ4532AEY-T1_GE3 Datasheet Page 4 SQ4532AEY-T1_GE3 Datasheet Page 5 SQ4532AEY-T1_GE3 Datasheet Page 6 SQ4532AEY-T1_GE3 Datasheet Page 7 SQ4532AEY-T1_GE3 Datasheet Page 8 SQ4532AEY-T1_GE3 Datasheet Page 9 SQ4532AEY-T1_GE3 Datasheet Page 10 SQ4532AEY-T1_GE3 Datasheet Page 11

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SQ4532AEY-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeN and P-Channel
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C7.3A (Tc), 5.3A (Tc)
Rds On (Max) @ Id, Vgs31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.8nC @ 10V, 10.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds535pF @ 15V, 528pF @ 15V
Power - Max3.3W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

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