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SQ4005EY-T1_GE3

SQ4005EY-T1_GE3

For Reference Only

Part Number SQ4005EY-T1_GE3
PNEDA Part # SQ4005EY-T1_GE3
Description MOSFET P-CHANNEL 12V 15A 8SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,250
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQ4005EY-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQ4005EY-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQ4005EY-T1_GE3, SQ4005EY-T1_GE3 Datasheet (Total Pages: 9, Size: 223.35 KB)
PDFSQ4005EY-T1_GE3 Datasheet Cover
SQ4005EY-T1_GE3 Datasheet Page 2 SQ4005EY-T1_GE3 Datasheet Page 3 SQ4005EY-T1_GE3 Datasheet Page 4 SQ4005EY-T1_GE3 Datasheet Page 5 SQ4005EY-T1_GE3 Datasheet Page 6 SQ4005EY-T1_GE3 Datasheet Page 7 SQ4005EY-T1_GE3 Datasheet Page 8 SQ4005EY-T1_GE3 Datasheet Page 9

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SQ4005EY-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs22mOhm@ 13.5A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs38nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds3600pF @ 6V
FET Feature-
Power Dissipation (Max)6W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

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