SQ4005EY-T1_GE3 Datasheet
SQ4005EY-T1_GE3 Datasheet
Total Pages: 9
Size: 223.35 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SQ4005EY-T1_GE3
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Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 15A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 22mOhm@ 13.5A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 38nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 6V FET Feature - Power Dissipation (Max) 6W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width) |
