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SQ3985EV-T1_GE3

SQ3985EV-T1_GE3

For Reference Only

Part Number SQ3985EV-T1_GE3
PNEDA Part # SQ3985EV-T1_GE3
Description MOSFET 2 P-CH 20V 3.9A 6TSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,784
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQ3985EV-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQ3985EV-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SQ3985EV-T1_GE3, SQ3985EV-T1_GE3 Datasheet (Total Pages: 10, Size: 259.43 KB)
PDFSQ3985EV-T1_GE3 Datasheet Cover
SQ3985EV-T1_GE3 Datasheet Page 2 SQ3985EV-T1_GE3 Datasheet Page 3 SQ3985EV-T1_GE3 Datasheet Page 4 SQ3985EV-T1_GE3 Datasheet Page 5 SQ3985EV-T1_GE3 Datasheet Page 6 SQ3985EV-T1_GE3 Datasheet Page 7 SQ3985EV-T1_GE3 Datasheet Page 8 SQ3985EV-T1_GE3 Datasheet Page 9 SQ3985EV-T1_GE3 Datasheet Page 10

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SQ3985EV-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET Type2 P-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3.9A (Tc)
Rds On (Max) @ Id, Vgs145mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds350pF @ 10V
Power - Max3W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

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Input Capacitance (Ciss) (Max) @ Vds

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