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SQ1563AEH-T1_GE3

SQ1563AEH-T1_GE3

For Reference Only

Part Number SQ1563AEH-T1_GE3
PNEDA Part # SQ1563AEH-T1_GE3
Description MOSFET N/P-CH 20V POWERPAKSC70-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,200
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQ1563AEH-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQ1563AEH-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SQ1563AEH-T1_GE3, SQ1563AEH-T1_GE3 Datasheet (Total Pages: 15, Size: 294.28 KB)
PDFSQ1563AEH-T1_GE3 Datasheet Cover
SQ1563AEH-T1_GE3 Datasheet Page 2 SQ1563AEH-T1_GE3 Datasheet Page 3 SQ1563AEH-T1_GE3 Datasheet Page 4 SQ1563AEH-T1_GE3 Datasheet Page 5 SQ1563AEH-T1_GE3 Datasheet Page 6 SQ1563AEH-T1_GE3 Datasheet Page 7 SQ1563AEH-T1_GE3 Datasheet Page 8 SQ1563AEH-T1_GE3 Datasheet Page 9 SQ1563AEH-T1_GE3 Datasheet Page 10 SQ1563AEH-T1_GE3 Datasheet Page 11

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SQ1563AEH-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN and P-Channel
FET FeatureStandard
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C850mA (Tc)
Rds On (Max) @ Id, Vgs280mOhm @ 850mA, 4.5V, 575mOhm @ 800mA, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs1.25nC @ 4.5V, 1.33nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds89pF @ 10V, 84pF @ 10V
Power - Max1.5W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SC-70-6 Dual
Supplier Device PackagePowerPAK® SC-70-6 Dual

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