SQ3481EV-T1_GE3
For Reference Only
| Part Number | SQ3481EV-T1_GE3 |
| PNEDA Part # | SQ3481EV-T1_GE3 |
| Description | MOSFET P-CHANNEL 30V 7.5A 6TSOP |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 27,012 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 27 - Dec 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SQ3481EV-T1_GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SQ3481EV-T1_GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SQ3481EV-T1_GE3 Datasheet
- where to find SQ3481EV-T1_GE3
- Vishay Siliconix
- Vishay Siliconix SQ3481EV-T1_GE3
- SQ3481EV-T1_GE3 PDF Datasheet
- SQ3481EV-T1_GE3 Stock
- SQ3481EV-T1_GE3 Pinout
- Datasheet SQ3481EV-T1_GE3
- SQ3481EV-T1_GE3 Supplier
- Vishay Siliconix Distributor
- SQ3481EV-T1_GE3 Price
- SQ3481EV-T1_GE3 Distributor
SQ3481EV-T1_GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | Automotive, AEC-Q101, TrenchFET® |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 43mOhm @ 5.3A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 23.5nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 870pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 4W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-TSOP |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
The Products You May Be Interested In
|
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 56mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 5.4nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 400pF @ 10V FET Feature - Power Dissipation (Max) 700mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-323 Package / Case SC-70, SOT-323 |
Manufacturer Alpha & Omega Semiconductor Inc. Series AlphaMOS FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 36A (Ta), 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.85mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 5200pF @ 15V FET Feature - Power Dissipation (Max) 4.2W (Ta), 34W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-DFN-EP (3.3x3.3) Package / Case 8-PowerWDFN |
Manufacturer Infineon Technologies Series HEXFET®, StrongIRFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 2.5mOhm @ 100A, 10V Vgs(th) (Max) @ Id 3.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4730pF @ 25V FET Feature - Power Dissipation (Max) 208W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer Micro Commercial Co Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.1A Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 60mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 50µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 300pF @ 10V FET Feature - Power Dissipation (Max) 200mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-323 Package / Case SC-70, SOT-323 |
Manufacturer Toshiba Semiconductor and Storage Series U-MOSII FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 85mOhm @ 1.35A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 413pF @ 15V FET Feature - Power Dissipation (Max) 700mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TSM Package / Case TO-236-3, SC-59, SOT-23-3 |
