Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

DMN2065UWQ-7

DMN2065UWQ-7

For Reference Only

Part Number DMN2065UWQ-7
PNEDA Part # DMN2065UWQ-7
Description MOSFET N-CH 20V 3.1A SOT323
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 2,106
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMN2065UWQ-7 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMN2065UWQ-7
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMN2065UWQ-7, DMN2065UWQ-7 Datasheet (Total Pages: 7, Size: 494.96 KB)
PDFDMN2065UWQ-7 Datasheet Cover
DMN2065UWQ-7 Datasheet Page 2 DMN2065UWQ-7 Datasheet Page 3 DMN2065UWQ-7 Datasheet Page 4 DMN2065UWQ-7 Datasheet Page 5 DMN2065UWQ-7 Datasheet Page 6 DMN2065UWQ-7 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • DMN2065UWQ-7 Datasheet
  • where to find DMN2065UWQ-7
  • Diodes Incorporated

  • Diodes Incorporated DMN2065UWQ-7
  • DMN2065UWQ-7 PDF Datasheet
  • DMN2065UWQ-7 Stock

  • DMN2065UWQ-7 Pinout
  • Datasheet DMN2065UWQ-7
  • DMN2065UWQ-7 Supplier

  • Diodes Incorporated Distributor
  • DMN2065UWQ-7 Price
  • DMN2065UWQ-7 Distributor

DMN2065UWQ-7 Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs56mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5.4nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds400pF @ 10V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-323
Package / CaseSC-70, SOT-323

The Products You May Be Interested In

IPD30N06S223ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

23mOhm @ 21A, 10V

Vgs(th) (Max) @ Id

4V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

901pF @ 25V

FET Feature

-

Power Dissipation (Max)

100W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IPD50R280CEATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ CE

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

13V

Rds On (Max) @ Id, Vgs

280mOhm @ 4.2A, 13V

Vgs(th) (Max) @ Id

3.5V @ 350µA

Gate Charge (Qg) (Max) @ Vgs

32.6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

773pF @ 100V

FET Feature

-

Power Dissipation (Max)

119W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRFR3303TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

33A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

31mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

29nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

750pF @ 25V

FET Feature

-

Power Dissipation (Max)

57W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

SIHP20N50E-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

19A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

184mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

92nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1640pF @ 100V

FET Feature

-

Power Dissipation (Max)

179W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

FQU9N25TU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

7.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

420mOhm @ 3.7A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

700pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 55W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Recently Sold

AD7768BSTZ

AD7768BSTZ

Analog Devices

IC ADC 24BIT SIGMA-DELTA 64LQFP

EPM7128STC100-15N

EPM7128STC100-15N

Intel

IC CPLD 128MC 15NS 100TQFP

MT25QU128ABA8ESF-0SIT

MT25QU128ABA8ESF-0SIT

Micron Technology Inc.

IC FLASH 128M SPI 133MHZ 16SOP2

A42MX09-PQ100

A42MX09-PQ100

Microsemi

IC FPGA 83 I/O 100QFP

SI4410DYPBF

SI4410DYPBF

Infineon Technologies

MOSFET N-CH 30V 10A 8-SOIC

MC68060RC50

MC68060RC50

NXP

IC MPU M680X0 50MHZ 206PGA

DS26521LN+

DS26521LN+

Maxim Integrated

IC TXRX T1/E1/J1 64-LQFP

W25Q64FVSSIG

W25Q64FVSSIG

Winbond Electronics

IC FLASH 64M SPI 104MHZ 8SOIC

MAX9011EUT+T

MAX9011EUT+T

Maxim Integrated

IC COMPARATOR TTL SOT23-6

ASPIAIG-F7030-4R7M-T

ASPIAIG-F7030-4R7M-T

Abracon

FIXED IND 4.7UH 9A 26.7MOHM

ACS723LLCTR-10AU-T

ACS723LLCTR-10AU-T

Allegro MicroSystems, LLC

SENSOR CURRENT HALL 10A DC

STM8AL3LE88TCY

STM8AL3LE88TCY

STMicroelectronics

IC MCU 8BIT 64KB FLASH 48LQFP