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SQ2361EES-T1-GE3

SQ2361EES-T1-GE3

For Reference Only

Part Number SQ2361EES-T1-GE3
PNEDA Part # SQ2361EES-T1-GE3
Description MOSFET P-CH 60V 2.5A SOT23
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,652
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQ2361EES-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQ2361EES-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQ2361EES-T1-GE3, SQ2361EES-T1-GE3 Datasheet (Total Pages: 7, Size: 115.06 KB)
PDFSQ2361EES-T1-GE3 Datasheet Cover
SQ2361EES-T1-GE3 Datasheet Page 2 SQ2361EES-T1-GE3 Datasheet Page 3 SQ2361EES-T1-GE3 Datasheet Page 4 SQ2361EES-T1-GE3 Datasheet Page 5 SQ2361EES-T1-GE3 Datasheet Page 6 SQ2361EES-T1-GE3 Datasheet Page 7

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SQ2361EES-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs150mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds545pF @ 30V
FET Feature-
Power Dissipation (Max)2W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3

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