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SQ1464EEH-T1_GE3

SQ1464EEH-T1_GE3

For Reference Only

Part Number SQ1464EEH-T1_GE3
PNEDA Part # SQ1464EEH-T1_GE3
Description MOSFET N-CHAN 60V SC-70
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 23,268
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQ1464EEH-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQ1464EEH-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQ1464EEH-T1_GE3, SQ1464EEH-T1_GE3 Datasheet (Total Pages: 9, Size: 216.6 KB)
PDFSQ1464EEH-T1_GE3 Datasheet Cover
SQ1464EEH-T1_GE3 Datasheet Page 2 SQ1464EEH-T1_GE3 Datasheet Page 3 SQ1464EEH-T1_GE3 Datasheet Page 4 SQ1464EEH-T1_GE3 Datasheet Page 5 SQ1464EEH-T1_GE3 Datasheet Page 6 SQ1464EEH-T1_GE3 Datasheet Page 7 SQ1464EEH-T1_GE3 Datasheet Page 8 SQ1464EEH-T1_GE3 Datasheet Page 9

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SQ1464EEH-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C440mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.5V
Rds On (Max) @ Id, Vgs1.41Ohm @ 2A, 1.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4.1nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds140pF @ 25V
FET Feature-
Power Dissipation (Max)430mW (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-70-6
Package / Case6-TSSOP, SC-88, SOT-363

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

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