SQ1464EEH-T1_GE3 Datasheet
SQ1464EEH-T1_GE3 Datasheet
Total Pages: 9
Size: 216.6 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SQ1464EEH-T1_GE3
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Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 440mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.5V Rds On (Max) @ Id, Vgs 1.41Ohm @ 2A, 1.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 4.1nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V FET Feature - Power Dissipation (Max) 430mW (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-70-6 Package / Case 6-TSSOP, SC-88, SOT-363 |
