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SPN02N60C3 E6433

SPN02N60C3 E6433

For Reference Only

Part Number SPN02N60C3 E6433
PNEDA Part # SPN02N60C3-E6433
Description MOSFET N-CH 650V 0.4A SOT-223
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,734
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPN02N60C3 E6433 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPN02N60C3 E6433
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SPN02N60C3 E6433, SPN02N60C3 E6433 Datasheet (Total Pages: 11, Size: 2,080.47 KB)
PDFSPN02N60C3 E6433 Datasheet Cover
SPN02N60C3 E6433 Datasheet Page 2 SPN02N60C3 E6433 Datasheet Page 3 SPN02N60C3 E6433 Datasheet Page 4 SPN02N60C3 E6433 Datasheet Page 5 SPN02N60C3 E6433 Datasheet Page 6 SPN02N60C3 E6433 Datasheet Page 7 SPN02N60C3 E6433 Datasheet Page 8 SPN02N60C3 E6433 Datasheet Page 9 SPN02N60C3 E6433 Datasheet Page 10 SPN02N60C3 E6433 Datasheet Page 11

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SPN02N60C3 E6433 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.5Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id3.9V @ 80µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds200pF @ 25V
FET Feature-
Power Dissipation (Max)1.8W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223-4
Package / CaseTO-261-4, TO-261AA

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