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SPB80N03S2L-04 G

SPB80N03S2L-04 G

For Reference Only

Part Number SPB80N03S2L-04 G
PNEDA Part # SPB80N03S2L-04-G
Description MOSFET N-CH 30V 80A D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,454
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPB80N03S2L-04 G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPB80N03S2L-04 G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SPB80N03S2L-04 G, SPB80N03S2L-04 G Datasheet (Total Pages: 8, Size: 417.92 KB)
PDFSPP80N03S2L04AKSA1 Datasheet Cover
SPP80N03S2L04AKSA1 Datasheet Page 2 SPP80N03S2L04AKSA1 Datasheet Page 3 SPP80N03S2L04AKSA1 Datasheet Page 4 SPP80N03S2L04AKSA1 Datasheet Page 5 SPP80N03S2L04AKSA1 Datasheet Page 6 SPP80N03S2L04AKSA1 Datasheet Page 7 SPP80N03S2L04AKSA1 Datasheet Page 8

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SPB80N03S2L-04 G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id2V @ 130µA
Gate Charge (Qg) (Max) @ Vgs105nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3900pF @ 25V
FET Feature-
Power Dissipation (Max)188W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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