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IRFH4209DTRPBF

IRFH4209DTRPBF

For Reference Only

Part Number IRFH4209DTRPBF
PNEDA Part # IRFH4209DTRPBF
Description MOSFET N-CH 25V 44A 8PQFN
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,964
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFH4209DTRPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFH4209DTRPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFH4209DTRPBF, IRFH4209DTRPBF Datasheet (Total Pages: 9, Size: 494.18 KB)
PDFIRFH4209DTRPBF Datasheet Cover
IRFH4209DTRPBF Datasheet Page 2 IRFH4209DTRPBF Datasheet Page 3 IRFH4209DTRPBF Datasheet Page 4 IRFH4209DTRPBF Datasheet Page 5 IRFH4209DTRPBF Datasheet Page 6 IRFH4209DTRPBF Datasheet Page 7 IRFH4209DTRPBF Datasheet Page 8 IRFH4209DTRPBF Datasheet Page 9

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IRFH4209DTRPBF Specifications

ManufacturerInfineon Technologies
SeriesFASTIRFET™, HEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C44A (Ta), 260A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs74nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4620pF @ 13V
FET Feature-
Power Dissipation (Max)3.5W (Ta), 125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePQFN (5x6)
Package / Case8-PowerTDFN

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