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SMUN5214T1G

SMUN5214T1G

For Reference Only

Part Number SMUN5214T1G
PNEDA Part # SMUN5214T1G
Description TRANS PREBIAS NPN 202MW SC70-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,538
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 5 - Apr 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SMUN5214T1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberSMUN5214T1G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
SMUN5214T1G, SMUN5214T1G Datasheet (Total Pages: 13, Size: 391.24 KB)
PDFNSVDTC114YM3T5G Datasheet Cover
NSVDTC114YM3T5G Datasheet Page 2 NSVDTC114YM3T5G Datasheet Page 3 NSVDTC114YM3T5G Datasheet Page 4 NSVDTC114YM3T5G Datasheet Page 5 NSVDTC114YM3T5G Datasheet Page 6 NSVDTC114YM3T5G Datasheet Page 7 NSVDTC114YM3T5G Datasheet Page 8 NSVDTC114YM3T5G Datasheet Page 9 NSVDTC114YM3T5G Datasheet Page 10 NSVDTC114YM3T5G Datasheet Page 11

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SMUN5214T1G Specifications

ManufacturerON Semiconductor
Series-
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max202mW
Mounting TypeSurface Mount
Package / CaseSC-70, SOT-323
Supplier Device PackageSC-70-3 (SOT323)

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Resistor - Base (R1)

22 kOhms

Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Vce Saturation (Max) @ Ib, Ic

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Frequency - Transition

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Voltage - Collector Emitter Breakdown (Max)

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Resistor - Base (R1)

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Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Vce Saturation (Max) @ Ib, Ic

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Current - Collector Cutoff (Max)

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Frequency - Transition

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Supplier Device Package

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Resistor - Base (R1)

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Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Vce Saturation (Max) @ Ib, Ic

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Panasonic Electronic Components

Manufacturer

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Series

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Transistor Type

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Resistor - Base (R1)

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Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Vce Saturation (Max) @ Ib, Ic

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Manufacturer

NXP USA Inc.

Series

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Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

22 kOhms

Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Vce Saturation (Max) @ Ib, Ic

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Current - Collector Cutoff (Max)

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Power - Max

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Package / Case

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Supplier Device Package

TO-92-3

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