Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SKI10123

SKI10123

For Reference Only

Part Number SKI10123
PNEDA Part # SKI10123
Description MOSFET N-CH 100V 66A TO-263
Manufacturer Sanken
Unit Price Request a Quote
In Stock 3,580
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SKI10123 Resources

Brand Sanken
ECAD Module ECAD
Mfr. Part NumberSKI10123
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SKI10123, SKI10123 Datasheet (Total Pages: 8, Size: 592.5 KB)
PDFSKI10123 Datasheet Cover
SKI10123 Datasheet Page 2 SKI10123 Datasheet Page 3 SKI10123 Datasheet Page 4 SKI10123 Datasheet Page 5 SKI10123 Datasheet Page 6 SKI10123 Datasheet Page 7 SKI10123 Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SKI10123 Datasheet
  • where to find SKI10123
  • Sanken

  • Sanken SKI10123
  • SKI10123 PDF Datasheet
  • SKI10123 Stock

  • SKI10123 Pinout
  • Datasheet SKI10123
  • SKI10123 Supplier

  • Sanken Distributor
  • SKI10123 Price
  • SKI10123 Distributor

SKI10123 Specifications

ManufacturerSanken
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C66A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs11.6mOhm @ 33A, 10V
Vgs(th) (Max) @ Id2.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs88.8nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6420pF @ 25V
FET Feature-
Power Dissipation (Max)135W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

SIR606BDP-T1-RE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

10.9A (Ta), 38.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

7.5V, 10V

Rds On (Max) @ Id, Vgs

17.4mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1470pF @ 50V

FET Feature

-

Power Dissipation (Max)

5W (Ta), 62.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

SI4404DY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

15A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.5mOhm @ 23A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

55nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.6W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

IRF7458TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

14A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V, 16V

Rds On (Max) @ Id, Vgs

8mOhm @ 14A, 16V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

59nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2410pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

IRF7807D2

Infineon Technologies

Manufacturer

Infineon Technologies

Series

FETKY™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

8.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V

Rds On (Max) @ Id, Vgs

25mOhm @ 7A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

IPB80N06S4L05ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.8mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

2.2V @ 60µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

8180pF @ 25V

FET Feature

-

Power Dissipation (Max)

107W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

MAX97220AETE+

MAX97220AETE+

Maxim Integrated

IC AMP AUD.13W STER AB 16TQFN

LTV-352T

LTV-352T

Lite-On Inc.

OPTOISO 3.75KV DARLINGTON 4SOP

MPQ8633BGLE-Z

MPQ8633BGLE-Z

Monolithic Power Systems Inc.

IC REG BUCK ADJUSTABLE 20A 21QFN

BSS84-7-F

BSS84-7-F

Diodes Incorporated

MOSFET P-CH 50V 130MA SOT23-3

74438356150

74438356150

Wurth Electronics

FIXED IND 15UH 1.9A 230MOHM SMD

MC74HC373ADWG

MC74HC373ADWG

ON Semiconductor

IC TRANSP LATCH OCT 3ST 20-SOIC

AD7305BRZ

AD7305BRZ

Analog Devices

IC DAC 8BIT V-OUT 20SOIC

NE3509M04-A

NE3509M04-A

CEL

FET RF 4V 2GHZ 4-SMINI

IM03GR

IM03GR

TE Connectivity Potter & Brumfield Relays

RELAY TELECOM DPDT 2A 5VDC

W25Q64JVSFIQ

W25Q64JVSFIQ

Winbond Electronics

IC FLASH 64M SPI 133MHZ 16SOIC

CAT24M01WI-GT3

CAT24M01WI-GT3

ON Semiconductor

IC EEPROM 1M I2C 1MHZ 8SOIC

MBRD1035CTLG

MBRD1035CTLG

ON Semiconductor

DIODE ARRAY SCHOTTKY 35V 5A DPAK