SIZ998DT-T1-GE3
For Reference Only
| Part Number | SIZ998DT-T1-GE3 |
| PNEDA Part # | SIZ998DT-T1-GE3 |
| Description | MOSFET 2 N-CH 30V 8-POWERPAIR |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 58,914 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 30 - Apr 4 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SIZ998DT-T1-GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
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| Mfr. Part Number | SIZ998DT-T1-GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
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SIZ998DT-T1-GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| FET Type | 2 N-Channel (Dual), Schottky |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc), 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.1nC @ 4.5V, 19.8nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 930pF @ 15V, 2620pF @ 15V |
| Power - Max | 20.2W, 32.9W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Supplier Device Package | 8-PowerPair® |
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