SIZ998DT-T1-GE3 Datasheet
SIZ998DT-T1-GE3 Datasheet
Total Pages: 14
Size: 238.2 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIZ998DT-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual), Schottky FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 20A (Tc), 60A (Tc) Rds On (Max) @ Id, Vgs 6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.1nC @ 4.5V, 19.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 930pF @ 15V, 2620pF @ 15V Power - Max 20.2W, 32.9W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerWDFN Supplier Device Package 8-PowerPair® |
