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SIZ200DT-T1-GE3

SIZ200DT-T1-GE3

For Reference Only

Part Number SIZ200DT-T1-GE3
PNEDA Part # SIZ200DT-T1-GE3
Description MOSFET N-CH DUAL 30V
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,714
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIZ200DT-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIZ200DT-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SIZ200DT-T1-GE3, SIZ200DT-T1-GE3 Datasheet (Total Pages: 13, Size: 272.03 KB)
PDFSIZ200DT-T1-GE3 Datasheet Cover
SIZ200DT-T1-GE3 Datasheet Page 2 SIZ200DT-T1-GE3 Datasheet Page 3 SIZ200DT-T1-GE3 Datasheet Page 4 SIZ200DT-T1-GE3 Datasheet Page 5 SIZ200DT-T1-GE3 Datasheet Page 6 SIZ200DT-T1-GE3 Datasheet Page 7 SIZ200DT-T1-GE3 Datasheet Page 8 SIZ200DT-T1-GE3 Datasheet Page 9 SIZ200DT-T1-GE3 Datasheet Page 10 SIZ200DT-T1-GE3 Datasheet Page 11

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SIZ200DT-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs28nC @ 10V, 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1510pF @ 15V, 1600pF @ 15V
Power - Max4.3W (Ta), 33W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerWDFN
Supplier Device Package8-PowerPair® (3.3x3.3)

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