SIZ200DT-T1-GE3 Datasheet
SIZ200DT-T1-GE3 Datasheet
Total Pages: 13
Size: 272.03 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIZ200DT-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® Gen IV FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs 5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V, 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1510pF @ 15V, 1600pF @ 15V Power - Max 4.3W (Ta), 33W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerWDFN Supplier Device Package 8-PowerPair® (3.3x3.3) |
