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SIUD401ED-T1-GE3

SIUD401ED-T1-GE3

For Reference Only

Part Number SIUD401ED-T1-GE3
PNEDA Part # SIUD401ED-T1-GE3
Description MOSFET P-CH 30V POWERPAK 0806
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 53,892
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIUD401ED-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIUD401ED-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIUD401ED-T1-GE3, SIUD401ED-T1-GE3 Datasheet (Total Pages: 8, Size: 204.31 KB)
PDFSIUD401ED-T1-GE3 Datasheet Cover
SIUD401ED-T1-GE3 Datasheet Page 2 SIUD401ED-T1-GE3 Datasheet Page 3 SIUD401ED-T1-GE3 Datasheet Page 4 SIUD401ED-T1-GE3 Datasheet Page 5 SIUD401ED-T1-GE3 Datasheet Page 6 SIUD401ED-T1-GE3 Datasheet Page 7 SIUD401ED-T1-GE3 Datasheet Page 8

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SIUD401ED-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen III
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Rds On (Max) @ Id, Vgs1.573Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs2nC @ 10V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds33pF @ 15V
FET Feature-
Power Dissipation (Max)1.25W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 0806
Package / CasePowerPAK® 0806

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