SIUD401ED-T1-GE3 Datasheet
SIUD401ED-T1-GE3 Datasheet
Total Pages: 8
Size: 204.31 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIUD401ED-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® Gen III FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 1.573Ohm @ 200mA, 10V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 2nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 33pF @ 15V FET Feature - Power Dissipation (Max) 1.25W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 0806 Package / Case PowerPAK® 0806 |
