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SISS10ADN-T1-GE3

SISS10ADN-T1-GE3

For Reference Only

Part Number SISS10ADN-T1-GE3
PNEDA Part # SISS10ADN-T1-GE3
Description MOSFET N-CHAN 40 V POWERPAK 1212
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,154
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SISS10ADN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSISS10ADN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SISS10ADN-T1-GE3, SISS10ADN-T1-GE3 Datasheet (Total Pages: 9, Size: 259.55 KB)
PDFSISS10ADN-T1-GE3 Datasheet Cover
SISS10ADN-T1-GE3 Datasheet Page 2 SISS10ADN-T1-GE3 Datasheet Page 3 SISS10ADN-T1-GE3 Datasheet Page 4 SISS10ADN-T1-GE3 Datasheet Page 5 SISS10ADN-T1-GE3 Datasheet Page 6 SISS10ADN-T1-GE3 Datasheet Page 7 SISS10ADN-T1-GE3 Datasheet Page 8 SISS10ADN-T1-GE3 Datasheet Page 9

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SISS10ADN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C31.7A (Ta), 109A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs61nC @ 10V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds3030pF @ 20V
FET Feature-
Power Dissipation (Max)4.8W (Ta), 56.8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8S (3.3x3.3)
Package / CasePowerPAK® 1212-8S

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