SISS10ADN-T1-GE3 Datasheet
SISS10ADN-T1-GE3 Datasheet
Total Pages: 9
Size: 259.55 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SISS10ADN-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® Gen IV FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 31.7A (Ta), 109A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.65mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 61nC @ 10V Vgs (Max) +20V, -16V Input Capacitance (Ciss) (Max) @ Vds 3030pF @ 20V FET Feature - Power Dissipation (Max) 4.8W (Ta), 56.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8S (3.3x3.3) Package / Case PowerPAK® 1212-8S |
