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SIS990DN-T1-GE3

SIS990DN-T1-GE3

For Reference Only

Part Number SIS990DN-T1-GE3
PNEDA Part # SIS990DN-T1-GE3
Description MOSFET 2N-CH 100V 12.1A 1212-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,992
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIS990DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIS990DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SIS990DN-T1-GE3, SIS990DN-T1-GE3 Datasheet (Total Pages: 13, Size: 570.69 KB)
PDFSIS990DN-T1-GE3 Datasheet Cover
SIS990DN-T1-GE3 Datasheet Page 2 SIS990DN-T1-GE3 Datasheet Page 3 SIS990DN-T1-GE3 Datasheet Page 4 SIS990DN-T1-GE3 Datasheet Page 5 SIS990DN-T1-GE3 Datasheet Page 6 SIS990DN-T1-GE3 Datasheet Page 7 SIS990DN-T1-GE3 Datasheet Page 8 SIS990DN-T1-GE3 Datasheet Page 9 SIS990DN-T1-GE3 Datasheet Page 10 SIS990DN-T1-GE3 Datasheet Page 11

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SIS990DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C12.1A
Rds On (Max) @ Id, Vgs85mOhm @ 8A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds250pF @ 50V
Power - Max25W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® 1212-8 Dual
Supplier Device PackagePowerPAK® 1212-8 Dual

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