SI7900AEDN-T1-GE3
For Reference Only
Part Number | SI7900AEDN-T1-GE3 |
PNEDA Part # | SI7900AEDN-T1-GE3 |
Description | MOSFET 2N-CH 20V 6A PPAK 1212-8 |
Manufacturer | Vishay Siliconix |
Unit Price | Request a Quote |
In Stock | 3,384 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SI7900AEDN-T1-GE3 Resources
Brand | Vishay Siliconix |
ECAD Module | |
Mfr. Part Number | SI7900AEDN-T1-GE3 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
Datasheet |
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SI7900AEDN-T1-GE3 Specifications
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
FET Type | 2 N-Channel (Dual) Common Drain |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 6A |
Rds On (Max) @ Id, Vgs | 26mOhm @ 8.5A, 4.5V |
Vgs(th) (Max) @ Id | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1.5W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® 1212-8 Dual |
Supplier Device Package | PowerPAK® 1212-8 Dual |
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