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SIS452DN-T1-GE3

SIS452DN-T1-GE3

For Reference Only

Part Number SIS452DN-T1-GE3
PNEDA Part # SIS452DN-T1-GE3
Description MOSFET N-CH 12V 35A 1212-8 PPAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,084
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIS452DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIS452DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIS452DN-T1-GE3, SIS452DN-T1-GE3 Datasheet (Total Pages: 13, Size: 570.82 KB)
PDFSIS452DN-T1-GE3 Datasheet Cover
SIS452DN-T1-GE3 Datasheet Page 2 SIS452DN-T1-GE3 Datasheet Page 3 SIS452DN-T1-GE3 Datasheet Page 4 SIS452DN-T1-GE3 Datasheet Page 5 SIS452DN-T1-GE3 Datasheet Page 6 SIS452DN-T1-GE3 Datasheet Page 7 SIS452DN-T1-GE3 Datasheet Page 8 SIS452DN-T1-GE3 Datasheet Page 9 SIS452DN-T1-GE3 Datasheet Page 10 SIS452DN-T1-GE3 Datasheet Page 11

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SIS452DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.25mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs41nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1700pF @ 6V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 52W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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