SIS110DN-T1-GE3
For Reference Only
Part Number | SIS110DN-T1-GE3 |
PNEDA Part # | SIS110DN-T1-GE3 |
Description | MOSFET N-CHAN 100V POWERPAK 1212 |
Manufacturer | Vishay Siliconix |
Unit Price | Request a Quote |
In Stock | 8,280 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 12 - Nov 17 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SIS110DN-T1-GE3 Resources
Brand | Vishay Siliconix |
ECAD Module | |
Mfr. Part Number | SIS110DN-T1-GE3 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Datasheet |
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Logistics Mode
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- Delivery date: usually 2 to 7 working days.
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Notes
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SIS110DN-T1-GE3 Specifications
Manufacturer | Vishay Siliconix |
Series | TrenchFET® Gen IV |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 5.2A (Ta), 14.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
Rds On (Max) @ Id, Vgs | 54mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 3.2W (Ta), 24W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK® 1212-8 |
Package / Case | PowerPAK® 1212-8 |
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