IRFZ46NSTRL
For Reference Only
| Part Number | IRFZ46NSTRL |
| PNEDA Part # | IRFZ46NSTRL |
| Description | MOSFET N-CH 55V 53A D2PAK |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 7,974 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 30 - Apr 4 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IRFZ46NSTRL Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IRFZ46NSTRL |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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IRFZ46NSTRL Specifications
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 53A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 28A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 72nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1696pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 107W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Manufacturer Alpha & Omega Semiconductor Inc. Series AlphaSGT™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.58mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7790pF @ 30V FET Feature - Power Dissipation (Max) 215W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-DFN-EP (5x6) Package / Case 8-PowerSMD, Flat Leads |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 105A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 11.8mOhm @ 63A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5320pF @ 50V FET Feature - Power Dissipation (Max) 380W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK (7-Lead) Package / Case TO-263-7, D²Pak (6 Leads + Tab) |
Manufacturer Infineon Technologies Series CoolMOS™ P7 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 700V Current - Continuous Drain (Id) @ 25°C 12.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 360mOhm @ 3A, 10V Vgs(th) (Max) @ Id 3.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs 16.4nC @ 400V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 517pF @ 400V FET Feature - Power Dissipation (Max) 59.5W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO251-3 Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
