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SIRB40DP-T1-GE3

SIRB40DP-T1-GE3

For Reference Only

Part Number SIRB40DP-T1-GE3
PNEDA Part # SIRB40DP-T1-GE3
Description MOSFET 2 N-CH 40V POWERPAK SO8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,784
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIRB40DP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIRB40DP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SIRB40DP-T1-GE3, SIRB40DP-T1-GE3 Datasheet (Total Pages: 13, Size: 352.23 KB)
PDFSIRB40DP-T1-GE3 Datasheet Cover
SIRB40DP-T1-GE3 Datasheet Page 2 SIRB40DP-T1-GE3 Datasheet Page 3 SIRB40DP-T1-GE3 Datasheet Page 4 SIRB40DP-T1-GE3 Datasheet Page 5 SIRB40DP-T1-GE3 Datasheet Page 6 SIRB40DP-T1-GE3 Datasheet Page 7 SIRB40DP-T1-GE3 Datasheet Page 8 SIRB40DP-T1-GE3 Datasheet Page 9 SIRB40DP-T1-GE3 Datasheet Page 10 SIRB40DP-T1-GE3 Datasheet Page 11

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SIRB40DP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Rds On (Max) @ Id, Vgs3.25mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs45nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds4290pF @ 20V
Power - Max46.2W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

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