SIZF906DT-T1-GE3
For Reference Only
| Part Number | SIZF906DT-T1-GE3 | ||||||||||||||||||
| PNEDA Part # | SIZF906DT-T1-GE3 | ||||||||||||||||||
| Description | MOSFET 2 N-CH 30V 60A POWERPAIR | ||||||||||||||||||
| Manufacturer | Vishay Siliconix | ||||||||||||||||||
| Unit Price |
|
||||||||||||||||||
| In Stock | 418 | ||||||||||||||||||
| Warehouses | Shipped from Hong Kong SAR | ||||||||||||||||||
| Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) | ||||||||||||||||||
| Guarantee | Up to 1 year [PNEDA-Warranty]* | ||||||||||||||||||
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|||||||||||||||||||
|
|
|||||||||||||||||||
SIZF906DT-T1-GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SIZF906DT-T1-GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SIZF906DT-T1-GE3 Datasheet
- where to find SIZF906DT-T1-GE3
- Vishay Siliconix
- Vishay Siliconix SIZF906DT-T1-GE3
- SIZF906DT-T1-GE3 PDF Datasheet
- SIZF906DT-T1-GE3 Stock
- SIZF906DT-T1-GE3 Pinout
- Datasheet SIZF906DT-T1-GE3
- SIZF906DT-T1-GE3 Supplier
- Vishay Siliconix Distributor
- SIZF906DT-T1-GE3 Price
- SIZF906DT-T1-GE3 Distributor
SIZF906DT-T1-GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® Gen IV |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 4.5V, 92nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 15V, 8200pF @ 15V |
| Power - Max | 38W (Tc), 83W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Supplier Device Package | 8-PowerPair® (6x5) |
The Products You May Be Interested In
|
Manufacturer Series NexFET™ FET Type 2 N-Channel (Dual) Common Drain FET Feature Standard Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 2.3W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-XFBGA Supplier Device Package 6-PicoStar |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 5.3A Rds On (Max) @ Id, Vgs 21mOhm @ 7.4A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Manufacturer Infineon Technologies Series HEXFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 5.2A, 4.3A Rds On (Max) @ Id, Vgs 50mOhm @ 2.6A, 4.5V Vgs(th) (Max) @ Id 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 660pF @ 15V Power - Max 2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Manufacturer ON Semiconductor Series - FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 1.8A, 1.5A Rds On (Max) @ Id, Vgs 188mOhm @ 900mA, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 88pF @ 10V Power - Max 800mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-SMD, Flat Leads Supplier Device Package 6-MCPH |
Manufacturer Diodes Incorporated Series - FET Type N and P-Channel Complementary FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 5.2A (Ta), 4.7A (Ta) Rds On (Max) @ Id, Vgs 50mOhm @ 4.5A, 10V, 60mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id 1V @ 250mA (Min) Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 770pF @ 40V, 1000pF @ 20V Power - Max 2.1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
