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SIZF906DT-T1-GE3

SIZF906DT-T1-GE3

For Reference Only

Part Number SIZF906DT-T1-GE3
PNEDA Part # SIZF906DT-T1-GE3
Description MOSFET 2 N-CH 30V 60A POWERPAIR
Manufacturer Vishay Siliconix
Unit Price
1 ---------- $10.1603
100 ---------- $9.6840
250 ---------- $9.2077
500 ---------- $8.7315
750 ---------- $8.3346
1,000 ---------- $7.9377
In Stock 418
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIZF906DT-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIZF906DT-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SIZF906DT-T1-GE3, SIZF906DT-T1-GE3 Datasheet (Total Pages: 13, Size: 226.64 KB)
PDFSIZF906DT-T1-GE3 Datasheet Cover
SIZF906DT-T1-GE3 Datasheet Page 2 SIZF906DT-T1-GE3 Datasheet Page 3 SIZF906DT-T1-GE3 Datasheet Page 4 SIZF906DT-T1-GE3 Datasheet Page 5 SIZF906DT-T1-GE3 Datasheet Page 6 SIZF906DT-T1-GE3 Datasheet Page 7 SIZF906DT-T1-GE3 Datasheet Page 8 SIZF906DT-T1-GE3 Datasheet Page 9 SIZF906DT-T1-GE3 Datasheet Page 10 SIZF906DT-T1-GE3 Datasheet Page 11

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SIZF906DT-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Rds On (Max) @ Id, Vgs3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs22nC @ 4.5V, 92nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds2000pF @ 15V, 8200pF @ 15V
Power - Max38W (Tc), 83W (Tc)
Operating Temperature-55°C ~ 150°C (TA)
Mounting TypeSurface Mount
Package / Case8-PowerWDFN
Supplier Device Package8-PowerPair® (6x5)

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