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SIR492DP-T1-GE3

SIR492DP-T1-GE3

For Reference Only

Part Number SIR492DP-T1-GE3
PNEDA Part # SIR492DP-T1-GE3
Description MOSFET N-CH 12V 40A PPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,520
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIR492DP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIR492DP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIR492DP-T1-GE3, SIR492DP-T1-GE3 Datasheet (Total Pages: 14, Size: 311.02 KB)
PDFSIR492DP-T1-GE3 Datasheet Cover
SIR492DP-T1-GE3 Datasheet Page 2 SIR492DP-T1-GE3 Datasheet Page 3 SIR492DP-T1-GE3 Datasheet Page 4 SIR492DP-T1-GE3 Datasheet Page 5 SIR492DP-T1-GE3 Datasheet Page 6 SIR492DP-T1-GE3 Datasheet Page 7 SIR492DP-T1-GE3 Datasheet Page 8 SIR492DP-T1-GE3 Datasheet Page 9 SIR492DP-T1-GE3 Datasheet Page 10 SIR492DP-T1-GE3 Datasheet Page 11

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SIR492DP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs3.8mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs110nC @ 8V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds3720pF @ 6V
FET Feature-
Power Dissipation (Max)4.2W (Ta), 36W (Tc)
Operating Temperature-50°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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