SIR492DP-T1-GE3 Datasheet
SIR492DP-T1-GE3 Datasheet
Total Pages: 14
Size: 311.02 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIR492DP-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 3.8mOhm @ 15A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 110nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 3720pF @ 6V FET Feature - Power Dissipation (Max) 4.2W (Ta), 36W (Tc) Operating Temperature -50°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |
