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STB34N50DM2AG

STB34N50DM2AG

For Reference Only

Part Number STB34N50DM2AG
PNEDA Part # STB34N50DM2AG
Description MOSFET N-CH 500V 26A
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 20,856
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB34N50DM2AG Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB34N50DM2AG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB34N50DM2AG, STB34N50DM2AG Datasheet (Total Pages: 15, Size: 914.01 KB)
PDFSTB34N50DM2AG Datasheet Cover
STB34N50DM2AG Datasheet Page 2 STB34N50DM2AG Datasheet Page 3 STB34N50DM2AG Datasheet Page 4 STB34N50DM2AG Datasheet Page 5 STB34N50DM2AG Datasheet Page 6 STB34N50DM2AG Datasheet Page 7 STB34N50DM2AG Datasheet Page 8 STB34N50DM2AG Datasheet Page 9 STB34N50DM2AG Datasheet Page 10 STB34N50DM2AG Datasheet Page 11

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STB34N50DM2AG Specifications

ManufacturerSTMicroelectronics
SeriesAutomotive, AEC-Q101, MDmesh™ DM2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs120mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs44nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1850pF @ 100V
FET Feature-
Power Dissipation (Max)190W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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