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FQD3N50CTM

FQD3N50CTM

For Reference Only

Part Number FQD3N50CTM
PNEDA Part # FQD3N50CTM
Description MOSFET N-CH 500V 2.5A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,824
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQD3N50CTM Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQD3N50CTM
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQD3N50CTM, FQD3N50CTM Datasheet (Total Pages: 10, Size: 1,264.42 KB)
PDFFQD3N50CTM Datasheet Cover
FQD3N50CTM Datasheet Page 2 FQD3N50CTM Datasheet Page 3 FQD3N50CTM Datasheet Page 4 FQD3N50CTM Datasheet Page 5 FQD3N50CTM Datasheet Page 6 FQD3N50CTM Datasheet Page 7 FQD3N50CTM Datasheet Page 8 FQD3N50CTM Datasheet Page 9 FQD3N50CTM Datasheet Page 10

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FQD3N50CTM Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.5Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds365pF @ 25V
FET Feature-
Power Dissipation (Max)35W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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