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SIHH24N65E-T1-GE3

SIHH24N65E-T1-GE3

For Reference Only

Part Number SIHH24N65E-T1-GE3
PNEDA Part # SIHH24N65E-T1-GE3
Description MOSFET N-CHAN 650V 23A POWERPAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 27,006
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 30 - Apr 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHH24N65E-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHH24N65E-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHH24N65E-T1-GE3, SIHH24N65E-T1-GE3 Datasheet (Total Pages: 9, Size: 196.18 KB)
PDFSIHH24N65E-T1-GE3 Datasheet Cover
SIHH24N65E-T1-GE3 Datasheet Page 2 SIHH24N65E-T1-GE3 Datasheet Page 3 SIHH24N65E-T1-GE3 Datasheet Page 4 SIHH24N65E-T1-GE3 Datasheet Page 5 SIHH24N65E-T1-GE3 Datasheet Page 6 SIHH24N65E-T1-GE3 Datasheet Page 7 SIHH24N65E-T1-GE3 Datasheet Page 8 SIHH24N65E-T1-GE3 Datasheet Page 9

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SIHH24N65E-T1-GE3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs150mOhm @ 12A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs116nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2814pF @ 100V
FET Feature-
Power Dissipation (Max)202W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 8 x 8
Package / Case8-PowerTDFN

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