IPI120N06S4H1AKSA2
For Reference Only
Part Number | IPI120N06S4H1AKSA2 |
PNEDA Part # | IPI120N06S4H1AKSA2 |
Description | MOSFET N-CH TO262-3 |
Manufacturer | Infineon Technologies |
Unit Price | Request a Quote |
In Stock | 5,886 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 27 - Dec 2 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPI120N06S4H1AKSA2 Resources
Brand | Infineon Technologies |
ECAD Module | |
Mfr. Part Number | IPI120N06S4H1AKSA2 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IPI120N06S4H1AKSA2 Specifications
Manufacturer | Infineon Technologies |
Series | Automotive, AEC-Q101, OptiMOS™ |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 2.4mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id | 4V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs | 270nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 21900pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 250W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO262-3-1 |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
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IXYS Manufacturer IXYS Series Polar™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1200V Current - Continuous Drain (Id) @ 25°C 800mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 25Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 333pF @ 25V FET Feature - Power Dissipation (Max) 50W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (IXTA) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |