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SIHG180N60E-GE3

SIHG180N60E-GE3

For Reference Only

Part Number SIHG180N60E-GE3
PNEDA Part # SIHG180N60E-GE3
Description MOSFET E SERIES 600V TO247AC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 12,852
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHG180N60E-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHG180N60E-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHG180N60E-GE3, SIHG180N60E-GE3 Datasheet (Total Pages: 9, Size: 171.98 KB)
PDFSIHG180N60E-GE3 Datasheet Cover
SIHG180N60E-GE3 Datasheet Page 2 SIHG180N60E-GE3 Datasheet Page 3 SIHG180N60E-GE3 Datasheet Page 4 SIHG180N60E-GE3 Datasheet Page 5 SIHG180N60E-GE3 Datasheet Page 6 SIHG180N60E-GE3 Datasheet Page 7 SIHG180N60E-GE3 Datasheet Page 8 SIHG180N60E-GE3 Datasheet Page 9

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SIHG180N60E-GE3 Specifications

ManufacturerVishay Siliconix
SeriesE
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs180mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs33nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1085pF @ 100V
FET Feature-
Power Dissipation (Max)156W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AC
Package / CaseTO-247-3

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